Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits (Materials, Circuits and Devices) - Softcover

9780863417436: Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits (Materials, Circuits and Devices)
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Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits is the first book that deals with a broad spectrum of process and device design, and modelling issues related to various semiconductor devices. This monograph attempts to bridge the gap between device modelling and process design using TCAD. Many simulation examples for different types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are given and compared with experimental data from state-of-the-art devices. Bringing various aspects of silicon heterostructures into one resource, this book also presents a comprehensive perspective of the emerging field and covers topics ranging from materials to fabrication, devices, modelling and applications.

The monograph is aimed at research and development engineers and scientists who are actively involved in microelectronics technology and device design via Technology CAD. It will also serve as a reference for postgraduate and research students in the field of electrical engineering and solid-state physics, and for TCAD engineers and developers.

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About the Author:

Alastair Armstrong is Professor of Electronic Engineering in the School of Electrical and Electronic Engineering, Queen's University Belfast. He has 30 years experience in simulation and design of semiconductor devices and circuits, and has published more than 130 journal and conference papers on related topics. His most recent publications cover the modelling of different semiconductor technologies including bipolar, MOS and silicon on insulator. Over the course of his career Armstrong has acted as a consultant to several international companies. He has been awarded twelve major research grants; many as principal investigator. He is a member of the Northern Ireland Semiconductor Research Centre, currently actively researching the modelling of novel types of multiple gate MOS transistor structures for nanotechnology.

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